Free Carrier Distribution Criterion in Quantum Dot Lasers
Keywords: Quantum Dot Laser, Spontaneous Emission, Gain, Thermal
Mehran University Research Journal of Engineering & Technology
Volume 35 , Issue 3
HIFSA SHAHID ,
References
1. |
Greenwood, P.D.L., Kennedy, K., Groom, K.M., Hugues,
M., Hopkinson, M., Hogg, R.A., Krstajicì, N., Smith,
L.E., Matcher, S.J., Bonesi, M., MacNeil, S., and
Smallwood, R., “Quantum Dot Super Luminescent Diodes
for Optical Coherence Tomography: Device
Engineeringâ€, IEEE Journal of Selected Topics in
Quantum Electronics, Volume 16, No. 4, pp. 1015-1022,
UK, 2010 |
2. |
Rafailov, E.U., Cataluna, M.A., and Sibbett, W., “ModeLocked Quantum-Dot Lasersâ€, Nature Photonics,
Volume 1, pp. 395-401, UK, 2007 |
3. |
Stevens, B.J., Childs, D.T.D., Shahid, H., and Hogg, R.A.,
“Direct Modulation of Excited State Quantum Dot
Lasersâ€, Applied Physics Letters, Volume 95, No. 6,
pp. 61101, UK, 2009 |
4. |
Grundmann, M., and Bimberg, D., “Theory of Random
Population for Quantum Dotsâ€, Physical Review-B,
Volume 55, No. 15, pp. 9740, Germany, 1997 |
5. |
Summers, H.D., Thomson, J.D., Smowton, P.M., Blood,
P., and Hopkinson, M., “Thermodynamic Balance in
Quantum Dot Lasersâ€, Semiconductor Science
Technology, Volume 16, pp. 140-143, UK, 2001 |
6. |
Spencer, P., Clarke, E., Howe, P., and Murray, R.,"Inhomogeneous Gain Effects in Quantum Dot Lasers",
Electronic Letters, Volume 43, No. 10, pp. 574-575, UK, 2007 |
7. |
O'Driscoll, I., Blood, P., and Smowton, P.M., "Random Population of Quantum Dots in InAs-GaAs Laser Structures", IEEE Journal of Quantum Electron, Volume 46, No. 4, pp. 525-532, UK, 2010 |
8. |
Goldmann, E., Lorke, M., Frauenheim, Y., and Jahnke, F., "Negative Differential Gain in Quantum Dot Systems: Interplay of Structural Properties and Many-Body
Effects", Applied Physics Letters, Volume 104, pp. 242108, Germany, 2014. |
9. |
Avrutin, E.A., Marsh, J.H., and Portnoi, E.L.,"Monolithic and Multi-Giga Hertz Mode-Locked Semiconductor Lasers: Constructions, Experiments, Models and Applications", IEE Proceedings of Optoelectronics, Volume 147, No. 4, pp. 251-278, UK,
200 |
10. |
Finch, P., Blood, P., Smowton, P.M., Sobiesierski, A.,Gwilliam, R.M., and O'Driscoll, I., "Femtosecond Pulse
Generation from a Two-Section Mode-Locked Quantum-Dot Laser Using Random Population", Proceedings of SPIE, Novel In-Plane Semiconductor Lasers,
Volume XIII, pp. 90020E, UK, 2014 |
11. |
Hutchings, M., O'Driscoll, I., Smowton, P.M., and Blood, P., "Fermi-Dirac and Random Carrier Distributions in Quantum Dot Lasers", Applied Physics Letters,
Volume 104, pp. 31103, UK, 2014. |
12. |
Otsubo, K., Hatori, N., Ishida, M., Okumura, S., Akiyama,T., Nakata, Y., Ebe, H., Sugawara M., and Arakawa, Y.,
"Temperature-Insensitive Eye-Opening under 10-Gb/s Modulation of 1.3-μm P-Doped Quantum-Dot Lasers without Current Adjustments", Japanese Journal Applied
Physics, Volume 43, pp. 1124-1126, Japan, 2004 |
13. |
Shahid, H., Childs, D.T.D., Stevens, B.J., and Hogg, R.A., "Comparison of Gain Measurement Techniques for 1.3im Quantum Dot Lasers", Novel In-Plane Semiconductor
Lasers, Proceedings of SPIE, pp. 79531W, UK, 2011. |
14. |
Shahid, H., Childs, D.T.D., Stevens, B.J., and Hogg, R.A.,
"Negative Differential Gain Due to Many Body Effects in Self-Assembled Quantum Dot Lasers", Applied Physics
Letters, Volume 99, pp. 61104, UK, 2011 |
15. |
Hakki, B.W., and Paoli, T.L., "Continuous Wave Degradation at 300K of GaAs Double Heterostructure Junction Lasers-II. Electronic Gain", Journal of Applied
Physics, Volume 44, pp. 4113-4119, USA, 1973. |
16. |
Bimberg, D., Grundmann, M., and Ledentsov, N.N.,"Quantum Dot Heterostructures", Wiley, Germany, 1999. |
17. |
Schneider, H.C., Chow, W.W., and Koch, S.W., "Many-Body Effects in the Gain Spectra of Highly Excited Quantum-Dot Lasers", Physics Review-B, Volume 64,
No. 11, pp. 115315, New Mexico, 2001. |
18. |
Majid, M.A., Chen, S.C., Childs, D.T.D., Shahid, H., Airey, R.J., Kennedy, K., Hogg, R.A., Clarke, E., Spencer,
P., and Murray, R., "Gain and Absorption Characteristics of Bilayer Quantum Dot Lasers Beyond 1.3 im ", Novel
In-Plane Semiconductor Lasers-X, Proceedings of SPIE,
pp. 795303, UK, 2011. |
|
|
|