Free Carrier Distribution Criterion in Quantum Dot Lasers

  • Hifsa Shahid Department of Electrical Engineering, University of Engineering and Technology, Kala Shah Kakoo Campus, Lahore.

Abstract

The spontaneous emission spectra of a 1.28μm InAs/GaAs QD (Quantum Dot) Fabry-Pérot laser device has been measured under continuous wave operation at a fixed junction temperature of 300K. At low carrier densities, empirically observed static peak wavelength position and a fixed spectral shape of the spontaneous emission spectra are indicative of the random-like population distribution rather than a global Fermi level in the system. A theoretical model based on the Monte-Carlo method has been shown to have good agreement with the empirical results. In addition the evolutions of spontaneous emission spectral shapes are also explained in terms of many body effects.

Published
Jul 1, 2016
How to Cite
SHAHID, Hifsa. Free Carrier Distribution Criterion in Quantum Dot Lasers. Mehran University Research Journal of Engineering and Technology, [S.l.], v. 35, n. 3, p. 309-316, july 2016. ISSN 2413-7219. Available at: <https://publications.muet.edu.pk/index.php/muetrj/article/view/451>. Date accessed: 20 apr. 2024. doi: http://dx.doi.org/10.22581/muet1982.1603.01.
Section
Articles
This is an open Access Article published by Mehran University of Engineering and Technolgy, Jamshoro under CCBY 4.0 International License